Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics

This study presents a method to enhance data processing by integrating unidirectional analogue artificial neuromorphic memristor device with piezoelectric nanogenerator, taking inspiration from biological information processing. A self-powered resistive memory is proposed, comprising an ITO/ZnO/Yb2O3/Au structure combined high-sensitivity nanogenerator (PENG) ITO/ZnO/Al. The operated at voltage sweep of ±4 V low operating current in range 1.4 µA. filament formation studied using conductive mode atomic force microscope. integration enables the creation sensing system that converts mechanical stimuli PENG into electrical signals, which are subsequently processed mimic functionality neuron without requiring additional circuitry. emulation encompasses crucial functions such as potentiation, depression, and synaptic plasticity. Furthermore, this highlights potential for hardware implementations neural networks weight change nonlinearity (NL) potentiation depression 1.94 0.89, respectively, accuracy 93%. outcomes research contribute progress next-generation low-power, perception correlated learning trainable capabilities.